Dr. Xinbo Zou received his B.Eng degree in Electronic Science and Technology from Beijing University of Posts and Telecommunications (BUPT) in 2007. He received his Ph.D from the Hong Kong University of Science and Technology (HKUST) in 2013 for developing high-performance green and yellow LEDs on Si substrates with nanotechnology. From 2014 to 2017, he was a Research Assistant Professor with the Department of Electronic and Computer Engineering and a Junior Fellow in the Institute for Advanced Study (IAS) of HKUST. His main research interests include characterization of III-N devices and systems, for power conversion and AI applications. Dr. Zou has authored more than 80 scientific papers.

相关链接：

https://ganology.sist.shanghaitech.edu.cn/

https://sist.shanghaitech.edu.cn/2023/1129/c2858a1086364/page.htm

https://sist.shanghaitech.edu.cn/2023/0930/c2858a1082705/page.htm

1.第三代半导体器件

2.功率器件与集成电路

3.突触器件与机器学习

主持与参与多项项目：

1. 上海市浦江人才计划

2. 上海市“科技创新行动计划”自然科学基金项目

3. 自然科学基金-重点项目

4. 欧洲CERN-RD50国际项目

5. 企业委托项目等

材料器件中心专硕招生专业：（085400，专业学位）电子信息

招生年度：2024年起

论文 （Selected Publications）

1.     Han Gao#, Yitian Gu#;Yu Zhang; Jialun Li; Junmin Zhou; Haowen Guo; Kei May Lau; Xinbo Zou*, 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (V_th > 4V) by Ion Beam Etching, IEEE Electron Device Letters, 2024, accepted.

2.     Jiaxiang Chen, Haitao Du, Haolan Qu, Han Gao, Yitian GU, Yitai Zhu, Wenbo Ye, Jun Zou, Hongzhi wang, and Xinbo Zou* AlGaN/GaN MOSHEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing, APL Machine Learning, 2024, accepted.

3.     Jiaxiang Chen, Haolan Qu, Jin Sui, Xing Lu, Haowen Guo, and Xinbo Zou*, Relaxation Kineticsof Interface States and Bulk Traps in Atomic Layer Deposited ZrO2/β-Ga2O3 (201) Metal-Oxide-Semiconductor Capacitors, Journal of Applied Physics, 2024, 135 (8), 085702. DOI: 10.1063/5.0185492.

4.     Haolan Qu#, Wei Huang#, Yu Zhang, Jin Sui, Jiaxiang Chen, Baile Chen, David Wei Zhang, Yuangang Wang, Yuanjie Lv, Zhihong Feng, and Xinbo Zou*, “Reliable Electrical Performance ofβ-Ga2O3 Schottky Barrier Diode at Cryogenic Temperature” , Journal of Vacuum Science & Technology A, 2024, 42 (2), 023418. DOI: 10.1116/6.0003298.

5.     Jin Sui, Jiaxiang Chen, Haolan Qu, Yu Zhang, Xing Lu, and Xinbo Zou*, Emission and Capture Characteristics of Deep Hole Trap in n-GaN by Optical Deep Level Transient Spectroscopy,Journal of Semiconductors, 2024, 45(3), 032503. DOI: 10.1088/1674-4926/45/3/032503.

6.     Junmin Zhou, Haowen Guo, Haitao Du, Yu Zhang, Haolan Qu, Wei Huang, Jianjun Zhou, ZhiqiangXiao, and Xinbo Zou*, RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gainfor LNA Applications, IEEE Electron Device Letters, vol. 44, no. 9, pp. 1412-1415, Sept. 2023,DOI: 10.1109/LED.2023.3294696. First experimental demonstration of RF p-GaN HEMT for LNA applications.

7.     Haolan Qu, Jiaxiang Chen, Yu Zhang, Jin Sui, Ruohan Zhang, Junmin Zhou, Xing Lu, and Xinbo Zou*, Investigation of minority carrier trap in NiO/β-Ga2O3 p-n heterojunction via deep level transient spectroscopy, Semiconductor Science and Technology, 38, 105010 (2023), DOI: 10.1088/1361-6641/acf608

8.     Yu Zhang, Yitian Gu, Yitai Zhu, Baile Chen, Huaxing Jiang*, Kei May Lau*, and Xinbo Zou*,Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT with ZrO2 Gate Dielectric, IEEE Transactions on Electron Devices, vol. 70, no. 11, pp. 5590-5595, Nov. 2023, doi: 10.1109/TED.2023.3313999.

9.     Jiaxiang Chen, Jin Sui, Haolan Qu, and Xinbo Zou*, Emission and Capture Kinetics of Minority Carrier Trap in GaN Devices by Optical DLTS, The 14th International Conference on Nitride Semiconductors (ICNS-14), November 12-17, 2023, Fukuoka, Japan (the Best Student Award)

10.  Haitao Du, Xu Zhang, Qifeng Lyu, Kei May Lau, and Xinbo Zou*, High-Performance Machine Vision System by GaN n-i-n Nanowire, The 14th International Conference on Nitride Semiconductors (ICNS-14), November 12-17, 2023, Fukuoka, Japan (the Best Student Award)

11.  Jin Sui#, Jiaxiang Chen#, Haolan Qu, Ruohan Zhang, Min Zhu, Xing Lu, and Xinbo Zou*, Neutron Irradiation Induced Carrier Removal and Deep Level Trap in n-GaN Schottky Barrier Diodes, China Semiconductor Technology International Conference (CSTIC), June 26-27, 2023, Shanghai, China (the Best Poster Award)

12.  Haolan Qu, Jiaxiang Chen, Yu Zhang, Jin Sui, Yitian Gu, Yuxin Deng, Danni Su, Ruohan Zhang,Xing Lu, and Xinbo Zou*, Emission and Capture Characteristics of Electron Trap (Eemi = 0.8eV)in Si-doped β-Ga2O3 Epilayer, Semiconductor Science and Technology, 38, 015001 (2022), DOI:10.1088/1361-6641/aca045.

13.  Yu Zhang#, Lihua Xu#, Yitian Gu, Haowen Guo, Huaxing Jiang*, Kei May Lau*, and Xinbo Zou*,Dynamic Characteristics of GaN MISHEMT with 5-nm in-situ SiNx Dielectric Layer, IEEE Journalof the Electron Devices Society, vol. 10, pp. 540-546, 2022, DOI:10.1109/JEDS.2022.3189819.

14.  Wenhan Song, Haowen Guo, Yitian Gu, Junmin Zhou, Jin Sui, Baile Chen, Wei Huang, andXinbo Zou*, Power Compression and Phase Analysis of GaN HEMT for Microwave Limiter Applications, Electronics, 11(13), 1958, 2022, DOI: 10.3390/electronics11131958

15.  Jiaxiang Chen, Wei Huang, Haolan Qu, Yu Zhang, Jianjun Zhou, Baile Chen, and Xinbo Zou*,Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep Level Transient Spectroscopy, Applied Physics Letters, 120, 212105 (2022), DOI: 10.1063/5.0083362.

16.  Junmin Zhou, Haowen Guo, Yitian Gu, and Xinbo Zou*, Demonstration and Modeling of Frequency Tripler Based on GaN Schottky Diode Pair, Microelectronics Journal, 125, 105464 (2022),DOI: 10.1016/j.mejo.2022.105464.

17.  Yitian Gu#, Wei Huang#*, Yu Zhang, Jin Sui, Yangqian Wang, Haowen Guo, Jianjun Zhou, BaileChen, and Xinbo Zou*, Temperature-Dependent Dynamic Performance of p-GaN Gate HEMTon Si, IEEE Transactions on Electron Devices, vol. 69, no. 6, pp. 3302-3309, June 2022, DOI:10.1109/TED.2022.3167342.

18.  Min Zhu#, Yuan Ren#, Leidang Zhou, Jiaxiang Chen, Haowen Guo, Liqi Zhu, Baile Chen, LiangChen, Xing Lu*, and Xinbo Zou*, Temperature-Dependent Electrical Characterizations of NeutronIrradiated GaN Schottky Barrier Diodes, Microelectronics Reliability, 125, 114345 (2021), DOI:10.1016/j.microrel.2021.114345.

19.  Yitian Gu#, Yangqian Wang#, Jiaxiang Chen, Baile Chen, Maojun Wang, and Xinbo Zou*, TemperatureDependent Dynamic Degradation of Carbon-Doped GaN HEMTs, IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3290-3295, July 2021, DOI: 10.1109/TED.2021.3077345. Quantitative determination of capture potential barrier and its effects in current collapse.

20.  Haowen Guo, Junmin Zhou, Maojun Wang, and Xinbo Zou*, Output Phase and Amplitude of GaN-based HEMT at Cryogenic Temperatures, IEEE Microwave and Wireless Components Letters, vol. 31, no. 11, pp. 1219-1222, Nov. 2021, DOI: 10.1109/LMWC.2021.3079222. First reveal of output phase and amplitude analysis of GaN HEMT at cryogenic temperatures.

21.  Jiaxiang Chen, Haoxun Luo, Haolan Qu, Min Zhu, Haowen Guo, Baile Chen, Yuanjie Lv, Xing Lu, and Xinbo Zou*, Single-trap Emission Kinetic in Vertical β-Ga2O3 Schottky Diodes by Deep Level Transient Spectroscopy, Semiconductor Science and Technology, 36 (2021) 055015, DOI: 10.1088/1361-6641/abed8d.

22.  (Invited Review) Yu Zhang, Chao Liu, Min Zhu, Yuliang Zhang, and Xinbo Zou*,A Review on GaN-based Two-Terminal Devices Grown on Si Substrates, Journal of Alloys and Compounds, 869 (2021) 159214, DOI: 10.1016/j.jallcom.2021.159214.

23.  Jiaxiang Chen, Haolan Qu, and Xinbo Zou*, Study of Traps in p-GaN Gate HEMT by Optical DLTS, Photonics in Chemical Physics (PICP 2021), Sep 26-28; Virtual Conference

24.  Jiaxiang Chen, Haolan Qu, Xing Lu, Xinbo Zou*, Electrical Characterization of Vertical β-Ga2O3 SBD w/o epi-layer, National Wide bandgap Semiconductor Conference (WBGS 2021), Nov. 7-10, Fujian, China.

25.  Jiaxiang Chen, Haolan Qu, Longheng Qi, Yaying Liu, Xu Zhang, Xinbo Zou*, Trap Characterization of InGaN/GaN Blue Light Emitting Diode on Si Substrate, Asia Communications and Photonics Conference (ACP 2021), Oct 24-27; Shanghai, China.

26.  Yuliang Zhang, Xu Zhang, Min Zhu, Jiaxiang Chen, Chak Wah Tang, Kei May Lau*, Xinbo Zou*, Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates, IEEE Transactions on Electron Devices, vol. 67, no. 10, pp. 3992-3998, Oct. 2020, 2020. DOI: 10.1109/TED.2020.3012422. First reported forward conduction instability of quasi-vertical GaN p-i-n diodes.

27.  38. Yangqian Wang#, Yitian Gu#, Xing Lu, Huaxing Jiang, Haowen Guo, Baile Chen, Kei May Lau, Xinbo Zou*, Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K, IEEE Journal of the Electron Devices Society, Vol. 8, pp.850-856, 2020. DOI:10.1109/JEDS.2020.3013656.

28.  Jiaxiang Chen, Min Zhu, Xing Lu, and Xinbo Zou*, Electrical Characterization of GaN Schottky Barrier Diode at Cryogenic Temperatures, Applied Physics Letters, 116, 062102 (2020), DOI: 10.1063/1.5131337.

29.  Xinbo Zou#*, Xu Zhang#, Yu Zhang, Qifeng Lyu, Chak Wah Tang, and Kei May Lau*, GaN Single Nanowire pin Diode for High-Temperature Operations, ACS Applied Electronic Materials, 2020, 2(3), 719-724, DOI: 10.1021/acsaelm.9b00801.